The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Jun. 29, 2004
Applicants:
Omer H. Dokumaci, Wappingers Falls, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Suryanarayan G. Hegde, New York, NY (US);
Inventors:
Omer H. Dokumaci, Wappingers Falls, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Suryanarayan G. Hegde, New York, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/8238 ;
U.S. Cl.
CPC ...
Abstract
The speed of CMOS circuits is improved by imposing a longitudinal tensile stress on the NFETs and a longitudinal compressive stress on the PFETs, by implanting in the sources and drains if the NFETs ions from the eighth column of the periodic table and hydrogen and implanting in the sources and drains of the PFETs ions from the fourth and sixth columns of the periodic table.