The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
May. 03, 2000
Sheng Sun, San Jose, CA (US);
Jeff C. Olsen, Los Gatos, CA (US);
Sanjay Yadav, Redwood City, CA (US);
Quanyuan Shang, Saratoga, CA (US);
Kam S. Law, Union City, CA (US);
Sheng Sun, San Jose, CA (US);
Jeff C. Olsen, Los Gatos, CA (US);
Sanjay Yadav, Redwood City, CA (US);
Quanyuan Shang, Saratoga, CA (US);
Kam S. Law, Union City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An apparatus and method for fabricating an electronic workpiece in which first and second electrodes within a plasma chamber are respectively connected to low frequency and high frequency RF power supplies. At least one capacitor is connected between the first electrode and electrical ground. The one or more capacitors can reduce or eliminate the coupling of high frequency RF power to any plasma outside the region directly between the two electrodes. Consequently, the invention can improve the performance of the plasma process by concentrating more of the RF power in the region between the two electrodes.