The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Mar. 15, 2000
Applicants:
Norman H. Tolk, Brentwood, TN (US);
Gunter Leupke, Williamsburg, VA (US);
Wei Wang, Austin, TX (US);
Inventors:
Norman H. Tolk, Brentwood, TN (US);
Gunter Leupke, Williamsburg, VA (US);
Wei Wang, Austin, TX (US);
Assignee:
Vanderbilt University, Nashville, TN (US);
Primary Examiner:
Int. Cl.
CPC ...
G01R031/02 ;
U.S. Cl.
CPC ...
Abstract
A method and/or device () for determining first and second band offsets () at a semiconductor/dielectric heterointerface (), which includes the semiconductor/dielectric heterointerface () exposed to incident photons () from a light source (); a detector () for generating a signal by detecting emitted photons () from the semiconductor/dielectric heterointerface (); and an element () for changing the energy of incident photons () to monitor the first and second band offsets ().