The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Feb. 03, 2004
Phung T. Nguyen, Pleasant Valley, NY (US);
Robert C. Wong, Poughkeepsie, NY (US);
Phung T. Nguyen, Pleasant Valley, NY (US);
Robert C. Wong, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A low cost SRAM (Static Random Access Memory) cell is disclosed with P well and N well contacts and preferably with a P+ diffusion crossing to ground. The SRAM cell is complete at the M2 metal level and has improved cell passgate leakage, functionality and fabrication yields. The SRAM cell comprises cross coupled pnp pull-up devices P, Pand npn pull-down devices N, N, with the P, Pdevices being connected to the power supply VDD, and the N, Ndevices being coupled through a P+ diffusion region to ground. A first passgate is coupled between a first bitline and the junction of the devices Pand N, with its gate coupled to a wordline, and a second passgate is coupled between a second bitline and the junction of devices Pand N, with its gate coupled to the wordline.