The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2005

Filed:

Dec. 19, 2002
Applicants:

Ali Kiaei, Mountain View, CA (US);

Mehdi Frederick Soltan, Santa Clara, CA (US);

Ali Rajaei, Santa Clara, CA (US);

Hamid Reza Rategh, Cupertino, CA (US);

Inventors:

Ali Kiaei, Mountain View, CA (US);

Mehdi Frederick Soltan, Santa Clara, CA (US);

Ali Rajaei, Santa Clara, CA (US);

Hamid Reza Rategh, Cupertino, CA (US);

Assignee:

Anadigics, Inc., Warren, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L027/082 ; H01L027/102 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate, an electrode disposed on an upper surface of the substrate, and a set of one or more transistor element(s) disposed on the upper surface of the substrate. The set of transistor element(s) compactly surrounds the electrode with a threshold distance. In one embodiment, the set also compactly surrounds a via hole. In another, the element(s) comprises a bipolar junction transistor that has an aggregate emitter length of not less than 10 microns. In still another embodiment, the device is coupled to a RF circuit for power amplification.


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