The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Dec. 30, 2002
Xingyuan Tang, West Linn, OR (US);
Haiying Fu, West Linn, OR (US);
Xingyuan Tang, West Linn, OR (US);
Haiying Fu, West Linn, OR (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A low-k precursor reactant compound containing silicon and carbon atoms is flowed into a CVD reaction chamber. High-frequency radio-frequency power is applied to form a plasma. Preferably, the reaction chamber is part of a dual-frequency PECVD apparatus, and low-frequency radio-frequency power is applied to the reaction chamber. Reactive components formed in the plasma react to form low-dielectric-constant silicon carbide (SiC) on a substrate surface. A low-k precursor is characterized by one of: a silicon atom and a carbon—carbon triple bond; a silicon atom and a carbon—carbon double bond; a silicon—silicon bond; or a silicon atom and a tertiary carbon group.