The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Jul. 12, 2002
Applicants:
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Inventors:
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Assignee:
Other;
Primary Examiner:
Int. Cl.
CPC ...
H01L021/31 ; H01L021/469 ;
U.S. Cl.
CPC ...
Abstract
A method for fabricating a gate structure having a polysilicon electrode using an oxygen-free chemistry to etch the polysilicon. In one embodiment, the chemistry further includes nitrogen.
Nallan, Padmapani. (2005). Method for fabricating a gate structure (U.S. Patent No. 6855643). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6855643
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile