The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Apr. 23, 2003
Hyuk-ju Ryu, Guri-shi, KR;
Young-wug Kim, Seoul, KR;
Chang-bong OH, Yongin-shi, KR;
Hee-sung Kang, Sungnam-shi, KR;
Hyuk-Ju Ryu, Guri-shi, KR;
Young-Wug Kim, Seoul, KR;
Chang-Bong Oh, Yongin-shi, KR;
Hee-Sung Kang, Sungnam-shi, KR;
Abstract
In a CMOS semiconductor device using a silicon germanium gate and a method of fabricating the same, a gate insulating layer, a conductive electrode layer that is a seed layer, a silicon germanium electrode layer, and an amorphous conductive electrode layer are sequentially formed on a semiconductor substrate. A photolithographic process is then carried out to remove the silicon germanium electrode layer in the NMOS region, so that the silicon germanium layer is formed only in the PMOS region and is not formed in the NMOS region.