The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2005

Filed:

Jul. 07, 2003
Applicants:

Alexander Ruf, Dresden, DE;

Norbert Urbansky, Dresden, DE;

Wilhelm Claussen, Dresden, DE;

Thomas Gärtner, Ottendorf-Okrilla, DE;

Sven Schmidbauer, Dresden, DE;

Inventors:

Alexander Ruf, Dresden, DE;

Norbert Urbansky, Dresden, DE;

Wilhelm Claussen, Dresden, DE;

Thomas Gärtner, Ottendorf-Okrilla, DE;

Sven Schmidbauer, Dresden, DE;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/44 ; H01L021/336 ;
U.S. Cl.
CPC ...
Abstract

A method makes contact with a doping region formed at a substrate surface of a substrate. An insulating layer is applied on the substrate surface and a contact hole is formed in the insulating layer. A metal-containing layer is subsequently deposited on the insulating layer and the surface region of the doping region that is uncovered by the contact hole. In a subsequent thermal process having two steps, first the metal-containing layer is reacted with the silicon of the doping region to form a metal silicide layer and then the rest of the metal-containing layer is converted into a metal-nitride-containing layer in a second thermal step.


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