The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Mar. 13, 2003
Chih-wei Hung, Hsin-Chu, TW;
Cheng-yuan Hsu, Hsin-Chu, TW;
Da Sung, Hsin-Chu, TW;
Chien-chih Du, Hsin-Chu, TW;
Chih-Wei Hung, Hsin-Chu, TW;
Cheng-Yuan Hsu, Hsin-Chu, TW;
Da Sung, Hsin-Chu, TW;
Chien-Chih Du, Hsin-Chu, TW;
Powerchip Semiconductor Corp., Hsin-Chu, TW;
Abstract
A flash memory includes a substrate, at least a source and two drains formed in the substrate, and the source located between the drains, two tunnel oxide layers formed on the substrate between each drain and the source, a floating gate formed on each of the tunnel oxide layers, a plurality of first oxide layers formed aside each of the floating gates, a dielectric layer formed on each of the floating gates, a control gate formed on each of the dielectric layers, a plurality of second oxide layers formed on surfaces of the control gates and extending toward both sides of the control gates, a lateral width of each second oxide layer being larger than a lateral width of each oxide layer, a third oxide layer formed on the source, and an erasing gate formed on the third oxide layer and located between the floating gates.