The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Apr. 15, 2003
Masao Nakayama, Ritto, JP;
Masahiko Inamori, Ibaraki, JP;
Takashi Yamamoto, Takatsuki, JP;
Kaname Motoyoshi, Nishinomiya, JP;
Masao Nakayama, Ritto, JP;
Masahiko Inamori, Ibaraki, JP;
Takashi Yamamoto, Takatsuki, JP;
Kaname Motoyoshi, Nishinomiya, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In order to provide a high frequency switch in which the setting range of the control voltage is expanded, the high frequency switch is constructed from a switch and a reference voltage generation circuit. The switch comprises first and second field effect transistors. In the first field effect transistor, the source electrode is connected to a signal input terminal, while the drain electrode is connected to a signal output terminal, and while the source electrode is connected to a control terminal. In the second field effect transistor, the source electrode is connected to the signal input terminal, while the drain electrode is connected to the signal output terminal, and while the gate electrode is connected to the control terminal. The reference voltage generation circuit generates two reference voltages the values of which are different from each other, then provides the lower reference voltage to the gate electrode of the first field effect transistor, and then provides the higher reference voltage to the source electrode of the second field effect transistor.