The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Feb. 24, 2003
Applicants:
Kenji Yoshiyama, Hyogo, JP;
Motoshige Igarashi, Hyogo, JP;
Keiichi Yamada, Hyogo, JP;
Katsuya Okada, Hyogo, JP;
Keiichi Higashitani, Hyogo, JP;
Inventors:
Kenji Yoshiyama, Hyogo, JP;
Motoshige Igarashi, Hyogo, JP;
Keiichi Yamada, Hyogo, JP;
Katsuya Okada, Hyogo, JP;
Keiichi Higashitani, Hyogo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/788 ; H01L027/01 ; H01L027/12 ; H01L029/76 ; H01L029/94 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device and a manufacturing method thereof permitting the quality of gate insulating films to be prevented from deteriorating and thereby permitting electrical characteristics of the device to be prevented from deteriorating are provided. In a semiconductor device including a plurality of field effect transistors, an oxidation protection filmis formed on a side of one gate electrode