The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
May. 09, 2003
Omkaram Nalamasu, Bridgewater, NJ (US);
Chien-shing Pai, Bridgewater, NJ (US);
Elsa Reichmanis, Westfield, NJ (US);
Shu Yang, New Providence, NJ (US);
Omkaram Nalamasu, Bridgewater, NJ (US);
Chien-Shing Pai, Bridgewater, NJ (US);
Elsa Reichmanis, Westfield, NJ (US);
Shu Yang, New Providence, NJ (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A process for fabricating an integrated semiconductor device with a low dielectric constant material and an integrated semiconductor device with the low dielectric constant material interposed between two conductors is disclosed. The low dielectric constant material has a dielectric constant of less than about 2.8. The low dielectric constant material is a porous glass material with an average pore size of less than about 10 nm. The low dielectric constant material is formed on a semiconductor substrate with circuit lines thereover by combining an uncured and unmodified glass resin with an amphiphilic block copolymer. The amphiphilic block copolymer is miscible in the uncured glass resin. The mixture is applied onto the semiconductor substrate and the glass resin is cured. The glass resin is further processed to decompose or otherwise remove residual block copolymer from the cured glass resin.