The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Mar. 23, 2001
Alvin D. Compaan, Sylvania, OH (US);
Kent J. Price, Toledo, OH (US);
Xianda MA, Milpitas, CA (US);
Konstantin Makhratchev, Fremont, CA (US);
Alvin D. Compaan, Sylvania, OH (US);
Kent J. Price, Toledo, OH (US);
Xianda Ma, Milpitas, CA (US);
Konstantin Makhratchev, Fremont, CA (US);
University of Maine, Toledo, OH (US);
Abstract
A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.