The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jan. 30, 2002
Yoshihiko Kanzawa, Kadoma, JP;
Tohru Saitoh, Settsu, JP;
Katsuya Nozawa, Osaka, JP;
Minoru Kubo, Nabari, JP;
Yoshihiro Hara, Hirakata, JP;
Takeshi Takagi, Kyoto, JP;
Takahiro Kawashima, Osaka, JP;
Yoshihiko Kanzawa, Kadoma, JP;
Tohru Saitoh, Settsu, JP;
Katsuya Nozawa, Osaka, JP;
Minoru Kubo, Nabari, JP;
Yoshihiro Hara, Hirakata, JP;
Takeshi Takagi, Kyoto, JP;
Takahiro Kawashima, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A multi-layer filmis formed by stacking a SiGeClayer (0≦x1<1 and 0<y1<1) having a small Ge mole fraction, e.g., a SiGeClayer, and a SiGeClayer (0<x2≦1 and 0≦y2<1) (where x1<x2 and y1>y2) having a high Ge mole fraction, e.g., a SiGelayer. In this manner, the range in which the multi-layer film serves as a SiGeC layer with C atoms incorporated into lattice sites extends to high degrees in which a Ge mole fraction is high.