The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Apr. 28, 2003
Applicants:
Li-chun Tien, Tainan, TW;
Ching-hao Shaw, Hsin-Chu, TW;
Inventors:
Li-Chun Tien, Tainan, TW;
Ching-Hao Shaw, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2976 ; H01L 2994 ; H01L 31062 ; H01L 31113 ; H01L 31119 ;
U.S. Cl.
CPC ...
Abstract
Standard cell layout efficiency is improved by utilization of a MOS interconnect that minimizes features and geometries requiring compliance with space intensive design rules. Source diffusion regions of MOS structures have a substantially constant width extension extending toward a substrate pick-up diffusion and shares a common silicidation therewith to effect an ohmic contact thereto.