The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Mar. 04, 2002
Applicants:
Chi-i Lang, Sunnyvale, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Ping Xu, Fremont, CA (US);
Louis Yang, San Francisco, CA (US);
Inventors:
Chi-I Lang, Sunnyvale, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Ping Xu, Fremont, CA (US);
Louis Yang, San Francisco, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2131 ; H01L 21469 ;
U.S. Cl.
CPC ...
Abstract
A method for depositing a low k dielectric film comprising silicon, carbon, and nitrogen is provided. The low k dielectric film is formed by a gas mixture comprising a silicon source, a carbon source, and NRRR, wherein R, R, and Rare selected from the group consisting of alkyl and phenyl groups. The low k dielectric film may be used as a barrier layer, an etch stop, an anti-reflective coating, or a hard mask.