The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2005

Filed:

Aug. 18, 2003
Applicant:

Kamal Kishore Goundar, Tama, JP;

Inventor:
Assignee:

ASM Japan K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2131 ; H01L 21469 ;
U.S. Cl.
CPC ...
Abstract

To deposit silicon carbide into a substrate, there is introduced into a reaction zone a gas including source gas of silicon, carbon, oxygen and an inert gas. An electric field is generated using low and high frequency RF power to produce a plasma discharge in the reaction zone to cause the deposition.


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