The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2005

Filed:

May. 01, 2002
Applicants:

Michael Rattner, Santa Clara, CA (US);

Jeffrey D. Chinn, Foster City, CA (US);

Inventors:

Michael Rattner, Santa Clara, CA (US);

Jeffrey D. Chinn, Foster City, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21302 ;
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a method of etching deep trenches in a substrate which utilizes the overlying mask structure to achieve a trench having a positive tapered sidewall angle of less than about 88°. The method employs the successive etching of a lateral undercut in the substrate beneath a masking material, while at the same time etching vertically downward beneath the mask. The coordinated widening of the lateral undercut at the top of the trench, while vertically extending the depth of the trench, is designed to provide the desired trench sidewall taper angle.


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