The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Jul. 09, 2002
Yoshinari Ichihashi, Gifu-ken, JP;
Norihiro Ikeda, Gifu-ken, JP;
Takashi Gotou, Ushiku, JP;
Ryousuke Usui, Ichinomiya, JP;
Tatsuya Fujishima, Tsukuba, JP;
Yoshinari Ichihashi, Gifu-ken, JP;
Norihiro Ikeda, Gifu-ken, JP;
Takashi Gotou, Ushiku, JP;
Ryousuke Usui, Ichinomiya, JP;
Tatsuya Fujishima, Tsukuba, JP;
Sanyo Electric Co. Ltd., Moriguchi, JP;
Abstract
A method for manufacturing a semiconductor device that forms a connection hole with high electric reliability even when the semiconductor device is designed to be highly integrated. The semiconductor device includes a lower layer wiring and an interlayer insulation film, which is formed on the lower layer wiring and has a connection hole connected with the lower layer wiring. The method includes forming the connection hole by etching the interlayer insulation film. The connection hole is formed by etching part of the lower layer wiring under a first etching condition through physical reaction in at least the vicinity of the lower layer wiring, and by etching part of the interlayer insulation film under a second etching condition that guarantees a selective ratio relative to the lower layer wiring.