The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Dec. 24, 2002
Applicants:
Yueh-chuan Lee, Hsinchu, TW;
Shih-lung Chen, Hsinchu, TW;
Inventors:
Yueh-Chuan Lee, Hsinchu, TW;
Shih-Lung Chen, Hsinchu, TW;
Assignee:
ProMOS Technologies Inc., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2138 ;
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a trench capacitor that includes providing a semiconductor substrate, forming a deep trench in the substrate, forming a thin sacrificial layer on a surface of the trench, and forming a hemispherical silicon grain layer over the thin sacrificial layer, wherein the sacrificial layer has a thickness to act as an etch stop during a subsequent step to remove at least a portion of the hemispherical silicon grain layer, and is electrically conductive.