The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Oct. 14, 2003
Shimpei Tsujikawa, Hino, JP;
Jiro Yugami, Yokohama, JP;
Toshiyuki Mine, Fussa, JP;
Masahiro Ushiyama, Kokubunji, JP;
Shimpei Tsujikawa, Hino, JP;
Jiro Yugami, Yokohama, JP;
Toshiyuki Mine, Fussa, JP;
Masahiro Ushiyama, Kokubunji, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The present invention provides a MOS semiconductor device which enables gate leakage current reduction with a thinner gate dielectric film for higher speed, and a production method thereof. According to the present invention, a gate dielectric filmis made as follows: after forming a silicon nitride filmwith a specified thickness, it is annealed in an oxidizing atmosphere to form silicon oxideon the silicon nitride film, then this silicon oxideis completely removed by exposure to a dissolving liquid. As a result, at depths between 0.12 nm and 0.5 nm from the top surface of the silicon nitride filmin the gate dielectric filmwhose main constituent elements are silicon, nitrogen and oxygen, the nitrogen concentration is higher than the oxygen concentration. This enables the use of a thinner gate dielectric film with silicon, nitrogen and oxygen as main constituent elements while at the same time realizing reduction in leakage currents.