The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Jun. 07, 2002
Anthony Lochtefeld, Cambridge, MA (US);
Mayank Bulsara, Cambridge, MA (US);
Anthony Lochtefeld, Cambridge, MA (US);
Mayank Bulsara, Cambridge, MA (US);
AmberWave Systems Corporation, Salem, NH (US);
Abstract
A method is disclosed for forming multiple gate insulators on a strained semiconductor heterostructure as well as the devices and circuits formed therefrom. In an embodiment, the method includes the steps of depositing a first insulators on the strained semiconductor heterostructure, removing at least a portion of the first insulators from the strained semiconductor heterostructure, and depositing a second insulators on the strained semiconductor heterostructure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile