The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Nov. 13, 2001
Michael R. Krames, Mountain View, CA (US);
Tetsuya Takeuchi, Sunnyvale, CA (US);
Norihide Yamada, Tokyo, JP;
Hiroshi Amano, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Michael R. Krames, Mountain View, CA (US);
Tetsuya Takeuchi, Sunnyvale, CA (US);
Norihide Yamada, Tokyo, JP;
Hiroshi Amano, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Lumileds Lighting U.S., LLC, San Jose, CA (US);
Abstract
A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength.