The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Jul. 16, 2002
Hiroaki Niino, Shizuoka, JP;
Toshiyasu Shirasuna, Shizuoka, JP;
Hitoshi Murayama, Shizuoka, JP;
Makoto Aoki, Shizuoka, JP;
Hiroaki Niino, Shizuoka, JP;
Toshiyasu Shirasuna, Shizuoka, JP;
Hitoshi Murayama, Shizuoka, JP;
Makoto Aoki, Shizuoka, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
To plasma-process a substrate having a large area uniformly at a high process speed to form a deposition film with uniform thickness and quality and favorable characteristics. A first high frequency power (with a frequency fand a power P) and a second high frequency power (with a frequency fand a power P) supplied to an electrode from a first high frequency power supply and a second high frequency power supply, respectively, are set so that the frequencies are equal to or higher than 10 MHz and equal to or lower than 250 MHz, a ratio of the frequency fto the frequency f(f/f) is equal to or higher than 0.1 and equal to or lower than 0.9, and a ratio of the power Pto a total power (P+P) is equal to or higher than 0.1 and equal to or lower than 0.9. The frequency fis changed during processing the substrate.