The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Jan. 24, 2003
Shih-hsien Yang, Tao-Yuan, TW;
Shih-Hsien Yang, Tao-Yuan, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
A method of erasing non-volatile memory data. The erasing method includes applying a first voltage to a substrate, applying a second voltage to a control gate and setting both source terminal and drain terminal to a floating state during a first time interval so that F-N tunneling can be utilized to carry out an erasing operation. In a second time interval, the control gate voltage is changed from the first voltage applied to a third voltage. In a third time interval, the substrate voltage is changed from the second voltage to 0 volt to prevent over-erasure of the non-volatile memory. The second voltage and the first voltage are in reverse bias. Similarly, the third voltage and the first voltage are also in reverse bias.