The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Sep. 06, 2002
Applicant:
Thierry Schwartzmann, Le Versoud, FR;
Inventor:
Thierry Schwartzmann, Le Versoud, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2900 ;
U.S. Cl.
CPC ...
Abstract
The forming of a contact with a deep region of a first conductivity type formed in a silicon substrate. The contact includes a doped silicon well region of the first conductivity type and an intermediary region connected between the deep layer and the well. This intermediary connection region is located under a trench. The manufacturing method enables forming of vertical devices, in particular fast bipolar transistors.