The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Apr. 15, 2003
Teruhito Ohnishi, Osaka, JP;
Koichiro Yuki, Kyoto, JP;
Shigeki Sawada, Kyoto, JP;
Keiichiro Shimizu, Nara, JP;
Koichi Hasegawa, Hyogo, JP;
Tohru Saitoh, Osaka, JP;
Paul A. Clifton, Menlo Park, CA (US);
Teruhito Ohnishi, Osaka, JP;
Koichiro Yuki, Kyoto, JP;
Shigeki Sawada, Kyoto, JP;
Keiichiro Shimizu, Nara, JP;
Koichi Hasegawa, Hyogo, JP;
Tohru Saitoh, Osaka, JP;
Paul A. Clifton, Menlo Park, CA (US);
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In a semiconductor device acting as an HBT, an emitter/base laminate portion is provided on a Si epitaxially grown layer in the SiGeC-HBT. The emitter/base laminate portion includes a SiGeC spacer layer, a SiGeC core base layer containing the boron, a Si cap layer, and an emitter layer formed by introducing phosphorous into the Si cap layer. The C content of the SiGeC spacer layer is equal to or lower than that of the SiGeC core base layer.