The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Jan. 08, 2003
Takashi Terauchi, Hyogo, JP;
Takashi Terauchi, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device fabrication method includes the steps of: forming a gate protection film covering a top face and side face of a gate electrode; forming an interlayer insulation film that is more readily etched than the gate protection film; removing the interlayer insulation film until the top face of the gate protection film is exposed; etching the interlayer insulation film and the gate protection film using a predetermined etchant with a resist film as a mask to form a pad contact hole; forming a conductor film; and forming a pad contact by leaving a portion of a conductor film in the pad contact hole, and removing the remaining portions of the conductor film. The fabrication method provides a semiconductor device that has a structure in which short-circuiting will not be developed between a pad contact and a gate interconnection, and between pad contacts.