The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Mar. 12, 2004
Barbara A. Haselden, Cupertino, CA (US);
John Lee, Cupertino, CA (US);
Barbara A. Haselden, Cupertino, CA (US);
John Lee, Cupertino, CA (US);
ProMOS Technologies Inc., Hsin Chu, TW;
Abstract
A method of etching nitride over oxide is provided for the formation of vertical profile nitride spacers with high uniformity while maintaining the integrity of underlying thin oxide layers. The method includes providing a first gas flow including a first fluorocarbon and a second fluorocarbon at a first ratio, applying a first quantity of power to the first gas flow to create a first plasma, etching a first portion of a silicon nitride layer with the first plasma, providing a second gas flow including the first fluorocarbon and the second fluorocarbon at a second ratio greater than the first ratio, applying a second quantity of power to the second gas flow to create a second plasma, and etching a second portion of the silicon nitride layer with the second plasma.