The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2005

Filed:

Jul. 19, 2002
Applicants:

Jillian M. Buriak, West Lafayette, IN (US);

Michael P. Stewart, Monroe, LA (US);

Edward Robins, Cambridge, GB;

Inventors:

Jillian M. Buriak, West Lafayette, IN (US);

Michael P. Stewart, Monroe, LA (US);

Edward Robins, Cambridge, GB;

Assignee:

Purdue Research Foundation, West Lafayette, IN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 33552 ;
U.S. Cl.
CPC ...
Abstract

The present invention is directed to a silicon substrate having a monolayer formed by an electrochemically-induced reaction between silicon hydride moieties on the silicon surface and optionally substituted alkynes covalently bound to the surface of the silicon substrate and to a method for electrochemically producing such a functionalized silicon substrate. The method of forming a covalently bound monolayer on a silicon surface comprises the steps of contacting the silicon surface with a C-Calkyne and electrografting optionally substituted alkynes to the silicon surface.


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