The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2005

Filed:

Apr. 02, 2003
Applicants:

John HU, Sunnyvale, CA (US);

Ana Ley, Sunnyvale, CA (US);

Philippe Schoenborn, San Jose, CA (US);

Inventors:

John Hu, Sunnyvale, CA (US);

Ana Ley, Sunnyvale, CA (US);

Philippe Schoenborn, San Jose, CA (US);

Assignee:

LSI Logic Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 1500 ;
U.S. Cl.
CPC ...
Abstract

A carbon-doped hard mask includes a dielectric material containing carbon which is released from the hard mask during a metal etching process. The released carbon is deposited on and bonds to sidewalls of the metal structure during the metal etching process to passivate the sidewalls of the metal structure and prevent lateral etching of the sidewalls during the metal etching process. The released carbon also prevents accumulation of metal residue in open fields.


Find Patent Forward Citations

Hu, John. (2005). Carbon-doped hard mask and method of passivating structures during semiconductor device fabrication (U.S. Patent No. 6846569). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6846569

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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