The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Dec. 28, 2001
Masahiro Furusawa, Suwa, JP;
Satoru Miyashita, Chino, JP;
Ichio Yudasaka, Chino, JP;
Tatsuya Shimoda, Fujimi-cho, JP;
Yasuaki Yokoyama, Tokyo, JP;
Yasuo Matsuki, Tokyo, JP;
Yasumasa Takeuchi, Tokyo, JP;
Masahiro Furusawa, Suwa, JP;
Satoru Miyashita, Chino, JP;
Ichio Yudasaka, Chino, JP;
Tatsuya Shimoda, Fujimi-cho, JP;
Yasuaki Yokoyama, Tokyo, JP;
Yasuo Matsuki, Tokyo, JP;
Yasumasa Takeuchi, Tokyo, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.