The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Jun. 05, 2001
Thomas H. Baum, New Fairfield, CT (US);
Phillip Chen, Bethel, CT (US);
Frank Dimeo, Jr., Danbury, CT (US);
Peter C. Van Buskirk, Newtown, CT (US);
Peter S. Kirlin, Austin, TX (US);
Thomas H. Baum, New Fairfield, CT (US);
Phillip Chen, Bethel, CT (US);
Frank DiMeo, Jr., Danbury, CT (US);
Peter C. Van Buskirk, Newtown, CT (US);
Peter S. Kirlin, Austin, TX (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.