The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Nov. 06, 2002
Fumio Murai, Hinode, JP;
Hiroshi Fukuda, Kodaira, JP;
Fumio Murai, Hinode, JP;
Hiroshi Fukuda, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Patterns for exposure are divided into subdivided regions taking into consideration a scope of an effect of backscattering, the Coulomb effect, and process factors, respectively, on errors in dimensions, and a pattern area occupancy ratio (pattern area density) within the respective subdivided regions is retained, thereby executing exposure with patterns after finding dimensions of pattern modification as the function of the respective pattern area densities. As a result, it becomes possible to fabricate a mask provided with correction for the errors in the dimensions, caused by plural factors such as backscattering, the Coulomb effect, and process factors, and to obtain highly accurate patterns for exposure. Further, use of pattern area density maps enables data processing time necessary for correction to be considerably reduced.