The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Jan. 31, 2001
BO Jin, Campbell, CA (US);
Andrey Zagrebelny, Eagan, MN (US);
Matthew Buchanan, Edina, MN (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
According to one embodiment, a shallow trench isolation (STI) method () may include forming an etch mask layer over both a first and second substrate side (). An etch mask layer over a first substrate side () may be patterned to form a STI etch mask, and trenches may be etched into a substrate (). A trench dielectric layer can be formed over a first substrate side (). An etch mask layer formed over a second substrate side can be etched (), reducing and/or eliminating stress that may deform a substrate or otherwise adversely affect STI features. A trench dielectric may then be chemically-mechanically polished (step).