The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Nov. 07, 2003
Applicants:
Kevin Weaver, San Jose, CA (US);
Gengying Gao, Fremont, CA (US);
Inventors:
Kevin Weaver, San Jose, CA (US);
Gengying Gao, Fremont, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31302 ;
U.S. Cl.
CPC ...
Abstract
A method and system for detecting the location of a defect within an integrated circuit (IC). With power applied to the IC via its power supply terminals (VDD, VSS), an infrared (IR) laser light is scanned along the X and Y dimensions of a surface of the IC. Reflected IR light and the IC power supply current are measured and processed using Fourier Transformation computations. Based upon the results of such computations, the Z coordinate is determined that corresponds to the depth of the defect within the IC.