The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Jul. 22, 2003
Hung-sheng Chen, San Jose, CA (US);
Huan-chung Tseng, Saratoga, CA (US);
Chang-kai Huang, Cupertino, CA (US);
Hung-Sheng Chen, San Jose, CA (US);
Huan-Chung Tseng, Saratoga, CA (US);
Chang-Kai Huang, Cupertino, CA (US);
Actel Corporation, Mountain View, CA (US);
Abstract
The present invention comprises an antifuse having a hemispherical grained (HSG) layer and a method of forming antifuse having a hemispherical grained (HSG) layer. The antifuse of the present invention comprises a plurality of layers, the first being a lower electrode that is disposed on an impurity region in a semiconductor substrate. A dielectric layer is disposed on the lower electrode, wherein the dielectric layer has a planar surface. A non-conductive hemispherical grain (HSG) layer is formed on the planar surface of the dielectric layer and an upper electrode is disposed on said non-conductive hemispherical grain (HSG) layer forming the antifuse.