The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Feb. 11, 2002
Applicants:
Gabriela Brase, Fishkill, NY (US);
Gregoire Grandremy, Dresden, DE;
Inventors:
Gabriela Brase, Fishkill, NY (US);
Gregoire Grandremy, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21311 ; H01L 21302 ;
U.S. Cl.
CPC ...
Abstract
The novel etching process for a two-layer metallization, or dual damascene patterning, is simple and cost-effective to carry out and reliably prevents fences from forming during the etching process in the region of the polymer intermediate layer. The etching of the oxide layer and of the polymer intermediate layer for the dual damascene patterning is effected by a CFARC open process with high selectivity with respect to the photoresist with a lengthened etching time.