The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2005

Filed:

Nov. 06, 2002
Applicants:

Hiroshi Kawashima, Hyogo, JP;

Motoshige Igarashi, Hyogo, JP;

Keiichi Higashitani, Hyogo, JP;

Inventors:

Hiroshi Kawashima, Hyogo, JP;

Motoshige Igarashi, Hyogo, JP;

Keiichi Higashitani, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2104 ; H01L 21336 ;
U.S. Cl.
CPC ...
Abstract

A thermal process for activating respective impurities in a polysilicon film to be a gate electrode and a resistance element is performed with the polysilicon film to be the gate electrode and the resistance element being coated with an oxide film, after the respective impurities are implanted into the polysilicon film to be the gate electrode and the resistance element. Here, concentrations of the respective impurities in the polysilicon film to be the gate electrode and the resistance element are adjusted by controlling the thickness of the oxide film. The degree of impurity activation is thereby adjusted.


Find Patent Forward Citations

Loading…