The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6841318 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 11, 2005

Filed:

Oct. 22, 2002
Applicant:

Haruo Iwasaki, Tokyo, JP;

Inventor:

Haruo Iwasaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 900 ;
U.S. Cl.
CPC ...
Abstract

Levenson masks capable of minimizing the effect of optical proximity, and a method for forming a fine pattern using such Levenson masks wherein the Levenson masks have patterns where shielding regions are sandwiched between shifter regions and non-shifter regions respectively. The shifter regions and the non-shifter regions are formed to have predetermined shapes to minimize the effect of optical proximity. Specifically, aperture widths, which are defined as widths of the shifter regions and widths of the non-shifter regions perpendicular to the longitudinal directions of the linear shielding regions, are of a predetermined width for minimizing the effect of optical proximity. The Levenson masks have patterns different from each other and are used for multiple exposures.


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Iwasaki, Haruo. (2005). Levenson phase shift mask and method for forming fine pattern by using the same (U.S. Patent No. 6841318). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6841318

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