The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2005

Filed:

Jun. 12, 2002
Applicants:

Jeong-sook Ha, Daejon, KR;

Kyoung-wan Park, Daejon, KR;

Seung-min Park, Seoul, KR;

Jong-hyurk Park, Daegu, KR;

Inventors:

Jeong-sook Ha, Daejon, KR;

Kyoung-wan Park, Daejon, KR;

Seung-min Park, Seoul, KR;

Jong-hyurk Park, Daegu, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 122 ;
U.S. Cl.
CPC ...
Abstract

A method of manufacturing Er-doped silicon nano-dot arrays and a laser ablation apparatus are provided. In the method, a target having a silicon region and an erbium region is prepared. A silicon substrate is introduced opposite to the target. Laser light is irradiated onto the target, a plume containing silicon ablated from the silicon region and erbium ablated from the erbium region is generated, and an Er-doped silicon film is deposited on the silicon substrate from the plume. The Er-doped silicon film is patterned.


Find Patent Forward Citations

Ha, Jeong-sook. (2005). Method of manufacturing er-doped silicon nano-dot array and laser ablation appparatus used therein (U.S. Patent No. 6841082). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6841082

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…