The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2005

Filed:

Sep. 29, 2000
Applicants:

Deborah L. See, Placerville, CA (US);

Robert N. Hasbun, Placerville, CA (US);

Jeffrey A. Dunlap, Sacramento, CA (US);

Phillip J. Del Pozo, Iii, El Dorado Hills, CA (US);

Richard P. Garner, Cameron Park, CA (US);

Inventors:

Deborah L. See, Placerville, CA (US);

Robert N. Hasbun, Placerville, CA (US);

Jeffrey A. Dunlap, Sacramento, CA (US);

Phillip J. del Pozo, III, El Dorado Hills, CA (US);

Richard P. Garner, Cameron Park, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1212 ;
U.S. Cl.
CPC ...
Abstract

Methods for storing data in an erasable nonvolatile memory are described herein. In one embodiment, an example method includes allocating a space within a block of an erasable nonvolatile memory for an object, wherein the allocated space is within a single block of the erasable nonvolatile memory and the allocated space includes a plurality of areas capable of storing multiple instances of the object, storing a first instance of the object in one of the areas within the allocated space, storing a superseding second instance of the object in another one of the areas within the allocated space without erasing any of the allocated space, and for each of the first and second instances of the object, storing status information corresponding to the respective instance of the object within the allocated space which is within the single block of the erasable nonvolatile memory.


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