The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Dec. 04, 2002
Kazuya Yamamoto, Hyogo, JP;
Satoshi Suzuki, Hyogo, JP;
Kazuya Yamamoto, Hyogo, JP;
Satoshi Suzuki, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A final-stage power amplification transistor is formed of unit transistors arranged in a mixed manner in a region in which the final output amplification transistors for a multi-band power amplifier is formed. Furthermore, an inductance element is connected between output signal lines to which the final output stage transistors are coupled. Thus, the final-stage transistors in a dual band power amplifier can be made free from current concentration due to heat generation without impairing inter-band isolation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile