The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Oct. 09, 2001
Motoshige Igarashi, Tokyo, JP;
Hiroyuki Amishiro, Tokyo, JP;
Motoshige Igarashi, Tokyo, JP;
Hiroyuki Amishiro, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
To provide a semiconductor device with reduced parasitic capacity in the vicinity of gate electrodes, and a method for manufacturing such a semiconductor device. The semiconductor device comprises a gate electrode formed on a silicon semiconductor substratethrough a gate oxide film, and a pair of impurity diffusion layers formed on the surface region of the silicon semiconductor substrate at both sides of the gate electrode. A silicon nitride film acting as a sidewall spacer is formed so as to cover the sidewall of the gate electrode, and the silicon nitride film is allowed to extend to the surface of the silicon semiconductor substratein the vicinity of the gate electrode in a substantially L-shaped profile.