The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2005

Filed:

Feb. 12, 2001
Applicants:

Howard E. Rhodes, Boise, ID (US);

Werner Juengling, Boise, ID (US);

Thomas A. Figura, Nishiwaki, JP;

Steven D. Cummings, Boise, ID (US);

Inventors:

Howard E. Rhodes, Boise, ID (US);

Werner Juengling, Boise, ID (US);

Thomas A. Figura, Nishiwaki, JP;

Steven D. Cummings, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27148 ; H01L 31062 ;
U.S. Cl.
CPC ...
Abstract

A photodiode for use in an imager having an improved charge leakage. The photodiode has a doped region that is spaced away from the field isolation to minimize charge leakage. A second embodiment of invention provides a second implant to improve charge leakage to the substrate. The photodiodes according to the invention provide improve charge leakage, improved reactions to dark current and an improved signal to noise ratio. Also disclosed are processes for forming the photodiode.


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