The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Jul. 03, 2001
Applicants:
Hiroshi Watanabe, Aichi, JP;
Jun Ito, Aichi, JP;
Shinya Asami, Aichi, JP;
Naoki Shibata, Aichi, JP;
Inventors:
Assignee:
Toyoda Gosei Co., Ltd., Aichi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2978 ; H01L 3300 ;
U.S. Cl.
CPC ...
Abstract
In a group III nitride compound semiconductor light-emitting device, a light-emitting layer having a portion where an InGaN layer is interposed between AlGaN layers on both sides thereof is employed. By controlling the thickness, growth rate and growth temperature of InGaN layer which is a well layer and the thickness of AlGaN layer which is a barrier layer so that they are optimized, the output of the light-emitting device is enhanced.