The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Jun. 29, 2001
Masahiro Tadokoro, Hachioji, JP;
Masahiro Shioya, Tama, JP;
Masayuki Kojima, Kokubunji, JP;
Takenobu Ikeda, Ome, JP;
Masahiro Tadokoro, Hachioji, JP;
Masahiro Shioya, Tama, JP;
Masayuki Kojima, Kokubunji, JP;
Takenobu Ikeda, Ome, JP;
Renesas Technology Corp., Tokyo, JP;
Hitachi ULSI Systems Co., Ltd., Tokyo, JP;
Abstract
A fabrication method of a semiconductor integrated circuit device comprises, in an SAC process or HARC process, subjecting a semiconductor substrate to plasma etching to make contact holes in an oxide film made of a silicon oxide film formed on the semiconductor substrate. For improving the ease-in-etching property of the silicon oxide film and selectivity to a nitride film, a residence time of an etching gas within a chamber is so set as to be in a range where selectivity to an insulating film made of silicon nitride is improved by using etching conditions of a low pressure and a large flow rate of the etching gas of CH/O/Ar.