The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Apr. 25, 2003
Martin E. Garnett, Los Gatos, CA (US);
Peter Zhang, San Jose, CA (US);
Steve Mccormack, Cupertino, CA (US);
Ji-hyoung Yoo, Cupertino, CA (US);
Martin E. Garnett, Los Gatos, CA (US);
Peter Zhang, San Jose, CA (US);
Steve McCormack, Cupertino, CA (US);
Ji-hyoung Yoo, Cupertino, CA (US);
Micrel, Inc., San Jose, CA (US);
Abstract
A method for fabricating a bipolar transistor includes forming a first region of a first conductivity type in a semiconductor structure to form a collector region and forming a second region of a second conductivity type in the first region to form a base region. A first mask is applied including an opening defining an emitter region of the bipolar transistor. The method further includes a triple implantation process using the first mask. Thus, a third region of the first conductivity type is formed in the first region and overlaid the second region. A fourth region of the second conductivity type is formed in the second region and is more heavily doped than the second region. A fifth region of the first conductivity type is formed in the second region and above the fourth region. The fifth region forms the emitter region of the bipolar transistor.