The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Dec. 23, 2002
Kent Kuohua Chang, Taipei, TW;
Kent Kuohua Chang, Taipei, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A fabrication method for a silicon nitride read only memory includes sequentially forming a tunneling oxide layer and a charge capture layer on a substrate. An isolation region is formed in the charge capture layer to partition the charge capture layer into a plurality of charge capture blocks. A stacked dielectric layer is then formed on the charge capture layer and the isolation region. Thereafter, the stacked dielectric layer and the charge capture layer are patterned to expose regions of the substrate for forming bit lines, followed by forming a field oxide layer and a control gate. A step of threshold voltage adjustment is subsequently performed such that the channel regions under the charge capture blocks are implanted to adjust the threshold voltages thereof